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this is information on a product in full production. february 2015 docid027211 rev 3 1/13 STF100N6F7 n-channel 60 v, 4.6 m ? typ., 46 a stripfet? f7 power mosfet in a to-220fp package datasheet - production data figure 1. internal schematic diagram features ? among the lowest r ds(on) on the market ? excellent figure of merit (fom) ? low c rss /c iss ratio for emi immunity ? high avalanche ruggedness applications ? switching applications description this n-channel power mosfet utilizes stripfet? f7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 72)3 $0y ' * 6 order code v ds r ds(on) max. i d p tot STF100N6F7 60 v 5.6 m ? 46 a 25 w table 1. device summary order code marking package packaging STF100N6F7 100n6f7 to-220fp tube www.st.com
contents STF100N6F7 2/13 docid027211 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid027211 rev 3 3/13 STF100N6F7 electrical ratings 13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 60 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 46 (1) 1. limited by package a i d drain current (continuous) at t c = 100 c 33 (1) a i dm (2) 2. pulse width is limited by safe operating area drain current (pulsed) 184 a p tot total dissipation at t c = 25 c 25 w e as (3) 3. starting t j = 25 c, i d = 20 a, v dd = 30 v single pulse avalanche energy 200 mj dv/dt (4) 4. i sd = 46 a; di/dt = 600 a/s; v dd = 48 v; t j < tjmax drain-body diode dynamic dv/dt ruggedness 6 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t j operating junction temperature -55 to 175 c t stg storage temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case 6 c/w r thj-amb thermal resistance junction-ambient 62.5 c/w
electrical characteristics STF100N6F7 4/13 docid027211 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0 v, i d = 1 ma 60 v i dss zero gate voltage drain current v gs = 0 v, v ds = 60 v 1 a v gs = 0 v, v ds = 60 v, t j =125c 100 a i gss gate-source leakage current v ds = 0 v, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 23 a 4.6 5.6 m ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz - 1980 - pf c oss output capacitance - 970 - pf c rss reverse transfer capacitance -86-pf q g total gate charge v dd = 30 v, i d = 46 a, v gs =10v -30-nc q gs gate-source charge - 12.6 - nc q gd gate-drain charge - 5.9 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =30v, i d =23a r g =4.7 ? , v gs =10v - 21.6 - ns t r rise time - 55.5 - ns t d(off) turn-off-delay time - 28.6 - ns t f fall time - 15 - ns
docid027211 rev 3 5/13 STF100N6F7 electrical characteristics 13 table 7. source drain diode symbol parameter test conditions min. typ. max. unit v sd (1) 1. pulse test: pulse duration = 300 s, duty cycle 1.5% forward on voltage v gs = 0 v, i sd = 46 a - 1.2 v t rr reverse recovery time i sd = 46 a, di/dt = 100 a/s, v dd = 48 v -48.4 ns q rr reverse recovery charge - 47 nc i rrm reverse recovery current - 2.0 a
electrical characteristics STF100N6F7 6/13 docid027211 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance *,3*$/6 , ' $ ?v ?v pv pv 2shudwlrqlqwklvduhd lvolplwhge\pd[5 '6rq 7 m ?& 7 & ?& 6lqjohsxovh 9 '6 9 w s6 . = wk . 5 wk-f / w s w s / 6lqjohsxovh *,3*$/6 9 '6 9 , ' $ 9 *6 9 9 *6 9 9 *6 9 9 *6 9 9 *6 9 9 *6 9 *,3*$/6 9 *6 9 , ' $ 9 '6 9 *,3*$/6 4jq& 9 *6 9 9 '6 9 , ' $ *,3*$/6 5 '6rq p , ' $ 9 *6 9 *,3*$/6
docid027211 rev 3 7/13 STF100N6F7 electrical characteristics 13 figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on-resistance vs temperature figure 11. source-drain diode forward characteristics figure 12. normalized v (br)dss vs temperature & 9 '6 9 s) & lvv & rvv & uvv *,3*$/6 9 *6wk 7 - ?& qrup , ' ?$ *,3*$/6 5 '6rq 7 - ?& qrup 9 *6 9 *,3*$/6 , 6' $ 7 - ?& 7 - ?& 7 - ?& 9 6' 9 *,3*$/6 7 - ?& 9 %5'66 qrup , ' p$ *,3*$/6
test circuits STF100N6F7 8/13 docid027211 rev 3 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd $0y 9 '' n n n n n 9 9 l 9 9 *0$; ?) 3: , * &2167 q) '87 9 * am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' $0y 9 '6 w rq 9 *6 w grq w u w rii w grii w i
docid027211 rev 3 9/13 STF100N6F7 package mechanical data 13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STF100N6F7 10/13 docid027211 rev 3 figure 19. to-220fp drawing 7012510_rev_k_b
docid027211 rev 3 11/13 STF100N6F7 package mechanical data 13 table 8. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 ?3 3.2
revision history STF100N6F7 12/13 docid027211 rev 3 5 revision history table 9. document revision history date revision changes 25-nov-2014 1 first release. 16-jan-2015 2 in section 1 , updated table 2: absolute maximum ratings in section 2 , ? updated table 4: on/off states ? updated table 5: dynamic ? updated table 6: switching times ? updated table 7: source drain diode added section 2.1: electrical characteristics (curves) 10-feb-2015 3 inserted dv/dt value in table 2: absolute maximum ratings .
docid027211 rev 3 13/13 STF100N6F7 13 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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